Atomic Layer Deposition

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Due to high controllability of deposition parameters (thickness; composition and structure), excellent uniformity and consistency, atomic layer deposition has gained broad applications micro/nanoelectronics and nanomaterials. Below is one of the major applications:

Metal gate

Replacing poly-silicon gate with metal gate materials made by atomic layer deposition can effectively eliminate interlayer power loss, prevent interaction with high-k gate dielectric and enhance device performance.

Major advantages include: all the advantage of poly-silicon gate material have been preserved; less prone to damages causes to the gate electrode; better adhesion and smoother interface. In addition, metal nitrides made by ALD have found much wider applications.

Materials in this category include: Ru, Pt, RuO, WN, TaN, TiN, HfN, etc.