Atomic Layer Deposition

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Due to high controllability of deposition parameters (thickness; composition and structure), excellent uniformity and consistency, atomic layer deposition has gained broad applications micro/nanoelectronics and nanomaterials. Below is one of the major applications:

Diffusion barrier for IC interconnect line

 A diffusion barrier is required o prevent Cu diffusion into semiconductor layers from Cu interconnect lines. Because most structures in IC have high aspect ratio and narrow trenches, high conformality of such a diffusion barrier layer is absolutely critical. Atomic layer deposition has been the key to resolving this issue. It has enabled low temperature deposition of highly conformal metal and metal nitride films with good adhesion.

Materials in this category include: WN, TaN, Co, etc. 

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