Atomic Layer Deposition

Due to high controllability of deposition parameters (thickness; composition and structure), excellent uniformity and consistency, atomic layer deposition has gained broad applications micro/nanoelectronics and nanomaterials. Below is one of the major applications:

DRAM, MRAM dielectrics

For DRAM dielectric layer technology, system structure, choice of materials and process recipe are all very critical. Capacitor technology has evolved from the ealier PIS(polymer/insulator/silicon) structure to current 65nm MIM(metal/insulator/metal) structure, in which, Ta2O5, HfO2 and especially Al2O3 by atomic layer deposition have been used successfully as insulators and TiN by ALD as metal layer. ALD is a proven technology for high-k dielectric and capacitor electrode applications. ALD can produce nanolaminates with precise layer thickness to enable high turn-off voltage, low leakage and low power loss. The ability to deposit uniform films on large substrates with complx structures, atomic layer deposition is natually suited for mass production of DRAM devices. 

Materials in this category include: WN, Pt, Ru, Cu, HfO2, ZrO2, titanates, etc., which provide broad choices for DRAM/MRAM application.